Download Chalcogenide Photovoltaics: Physics, Technologies, and Thin by Roland Scheer PDF

By Roland Scheer

This primary entire description of an important fabric homes and gadget facets closes the space among basic books on sun cells and magazine articles on chalcogenide-based photovoltaics.Written by way of very popular authors with years of sensible adventure within the box, the e-book covers II-VI and I-III-VI2 fabrics in addition to strength conversion at heterojunctions. It additionally discusses the most recent semiconductor heterojunction types and provides glossy research strategies. skinny movie expertise is defined with an emphasis on present and destiny concepts for mass creation, and the publication closes with a compendium of failure research in photovoltaic skinny movie modules.With its review of the semiconductor physics and expertise wanted, this sensible ebook is perfect for college students, researchers, and brands, in addition to for the starting to be variety of engineers and researchers operating in businesses and institutes on chalcogenide photovoltaics.

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Sample text

The band edges are connected with convex shape for the p-type semiconductor and concave shape for the n-type. Thereby, it is recommended to draw the majority carrier related band edge first, that is, the valence band of the p-type and conduction band of the n-type semiconductor. The procedure may be extended to a heterostructure with three semiconductors. 3a shows the band edges of three semiconductors plus two metals and their Fermi energies before contact. 3 Schematic of the heterostructure formation process between a window layer, w, a buffer layer, b, and an absorber layer, a.

Nevertheless, for the time being it is instructive to discuss fixed charge densities. Moreover, the absolute interface charge density may be the measured quantity of a capacitance experiment [24]. 25) where wa and ww are the depletion widths of absorber and window. It is z = +1 for a positive interface charge and z = −1 for a negative one. 25) is valid as long as free carriers can be neglected. With the neutrality condition in Eq. 25), an analytical solution of Eq. 26) The first two terms of Eq. 26) are identical to Eq.

The data shown are: simulated values (symbols) and calculated values after Eq. 35) (lines). (a) Data 1017 [cm−3] NA,a = 1017 cm−3 10−7 (c) 10−6 10−5 10−4 db [cm] shown as a function of buffer donor density with parameter NA,a . (b) Data shown as a function of the absorber acceptor density with parameter ND,b . (c) Data shown as a function of the buffer thickness with ND,b = 1015 cm−3 and with parameter NA,a . 1. 7a gives values of Ep,az=0 calculated after Eq. 30) as a function of the buffer donor concentration for different absorber acceptor concentrations (full line).

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